Joachim Würfl

According to our database, Joachim Würfl authored at least 20 papers between 2001 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications.

Yi-Fan Tsao, Heng-Shou Hsu, Joachim Würfl, Heng-Tung Hsu

IEEE Access, 2022

2021

GaN-channel HEMTs with AlN buffer for high-voltage switching.

Oliver Hilt, Frank Brunner, Eldad Bahat-Treidel, Mihaela Wolf, Joachim Würfl

Proceedings of the Device Research Conference, 2021

2020

The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications.

Eldad Bahat-Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl

Proceedings of the 2020 Device Research Conference, 2020

2018

Design and Development of Gallium Nitride HEMTs Based Liquid Sensor.

Nidhi Chaturvedi, Richard Lossy, Kuldip Singh, Dheeraj K. Kharbanda, Shivanshu Mishra, Ashok Chauhan, Kaushal Kishore, Pramod K. Khanna, Joachim Würfl

Proceedings of the 2018 IEEE SENSORS, New Delhi, India, October 28-31, 2018, 2018

2016

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.

Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale

Microelectron. Reliab., 2016

Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs.

Eldad Bahat-Treidel, Oliver Hilt, O. Bahat Treidel, Joachim Würfl

Microelectron. Reliab., 2016

2015

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications.

Clément Fleury, Mattia Capriotti, Matteo Rigato, Oliver Hilt, Joachim Würfl, Joff Derluyn, Stephan Steinhauer, Anton Köck, Gottfried Strasser, Dionyz Pogany

Microelectron. Reliab., 2015

E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator.

Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery.

Ponky Ivo, Eunjung Melanie Cho, Przemyslaw Kotara, Lars Schellhase, Richard Lossy, Ute Zeimer, Anna Mogilatenko, Joachim Würfl, Günther Tränkle, Arkadiusz Glowacki, Christian Boit

Microelectron. Reliab., 2014

Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors.

Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl

Microelectron. Reliab., 2014

2013

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications.

Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany

Microelectron. Reliab., 2013

2012

Single- and double-heterostructure GaN-HEMTs devices for power switching applications.

Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso

Microelectron. Reliab., 2012

Reliability studies on GaN HEMTs with sputtered Iridium gate module.

Richard Lossy, Hervé Blanck, Joachim Würfl

Microelectron. Reliab., 2012

2011

Reliability issues of GaN based high voltage power devices.

Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska

Microelectron. Reliab., 2011

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements.

Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle

Microelectron. Reliab., 2011

2010

Determination of GaN HEMT reliability by monitoring I_DSS.

Reza Pazirandeh, Joachim Würfl, Günther Tränkle

Microelectron. Reliab., 2010

2009

Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures.

Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle

Microelectron. Reliab., 2009

2004

Reliability Investigation of Gallium Nitride HEMT.

A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl

Microelectron. Reliab., 2004

2003

Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE.

Frank Brunner, A. Braun, Paul Kurpas, J. Schneider, Joachim Würfl, Markus Weyers

Microelectron. Reliab., 2003

2001

Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing.

Joachim Würfl, Paul Kurpas, Frank Brunner, Michael Mai, Matthias Rudolph, Markus Weyers

Microelectron. Reliab., 2001