Jizuo Zhang

According to our database, Jizuo Zhang authored at least 4 papers between 2018 and 2019.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2019

The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET.

Jizuo Zhang, Jianjun Chen, Pengcheng Huang, Shouping Li, Liang Fang

Symmetry, 2019

Dependency of well-contact density on MCUs in 65-nm bulk CMOS SRAM.

Cheng Xie, Yueyue Chen, Jianjun Chen, Jizuo Zhang

Sci. China Inf. Sci., 2019

Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking.

Jizuo Zhang, Liang Fang, Jianjun Chen, Shen Hou, Xianyu Tong

IEEE Access, 2019

2018

Angular dependency on heavy-ion-induced single-event multiple transients (SEMT) in 65 nm twin-well and triple-well CMOS technology.

Jizuo Zhang, Jianjun Chen, Pengcheng Huang, Shouping Li, Liang Fang

Microelectron. Reliab., 2018