Jiuren Zhou

According to our database, Jiuren Zhou authored at least 6 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories.

Zhe Wang, Yan Liu, Jiuren Zhou, Genquan Han

Microelectron. J., January, 2024

Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition.

Yang Li, Danyang Yao, Yan Liu, Zhi Jiang, Ruiqing Wang, Xu Ran, Jiuren Zhou, Qikun Wang, Guoqiang Wu, Genquan Han

Sci. China Inf. Sci., 2024

Accurate Charge-Domain Bootstrapped Computing-in-Memory SRAM Design with Wide Programmable Output Voltage Range.

Fuyi Li, Yu Xia, Shuai Xiao, Pengcheng Yang, Xingyu Zhu, Bo Li, Jiuren Zhou, Genquan Han, Wei Mao

Proceedings of the 37th IEEE International System-on-Chip Conference, 2024

2022

Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention.

Zuopu Zhou, Leming Jiao, Jiuren Zhou, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit.

Yue Chen, Gong Zhang, Jiuren Zhou, Zijie Zheng, Leming Jiao, Haibo Wang, Zuopu Zhou, Annie Kumar, Jishen Zhang, Yuxuan Wang, Qiwen Kong, Chen Sun, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021

High mobility germanium-on-insulator p-channel FinFETs.

Huan Liu, Genquan Han, Jiuren Zhou, Yan Liu, Yue Hao

Sci. China Inf. Sci., 2021