Jinshun Bi

According to our database, Jinshun Bi authored at least 19 papers between 2014 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Nanoscale Air Channel Devices for Emerging IC Applications.

Jinshun Bi

Proceedings of the International Conference on IC Design and Technology, 2023

2022

Ultrathin HfO₂/Al₂O₃ bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing.

Qiang Wang, Yankun Wang, Ren Luo, Jianjian Wang, Lanlong Ji, Zhuangde Jiang, Christian Wenger, Zhitang Song, Sannian Song, Wei Ren, Jinshun Bi, Gang Niu

Neuromorph. Comput. Eng., December, 2022

Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions.

Xueqin Yang, Yannan Xu, Jinshun Bi, Kai Xi, Linjie Fan, Lanlong Ji, Gaobo Xu

Sci. China Inf. Sci., 2022

2021

Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design.

Jianjian Wang, Jinshun Bi, Gang Liu, Hua Bai, Kai Xi, Bo Li, Sandip Majumdar, Lanlong Ji, Ming Liu, Zhangang Zhang

Sci. China Inf. Sci., 2021

2020

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations.

Linjie Fan, Jinshun Bi, Kai Xi, Gangping Yan

Sensors, 2020

Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations.

Linjie Fan, Jinshun Bi, Kai Xi, Sandip Majumdar, Bo Li

Sensors, 2020

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.

Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang

Sci. China Inf. Sci., 2020

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin

IEEE Access, 2020

2019

Total ionizing dose effects on graphene-based charge-trapping memory.

Kai Xi, Jinshun Bi, Sandip Majumdar, Bo Li, Jing Liu, Yannan Xu, Ming Liu

Sci. China Inf. Sci., 2019

Radiation effects of floating-gate (FG) and charge-trapping (CT) Flash memory technologies.

Jinshun Bi

Proceedings of the International Conference on IC Design and Technology, 2019

2018

The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices.

Teng Zhang, Bruno Allard, Jinshun Bi

Microelectron. Reliab., 2018

A single event upset tolerant latch design.

Haibin Wang, Xixi Dai, Yangsheng Wang, Issam Nofal, Li Cai, Zicai Shen, Wanxiu Sun, Jinshun Bi, Bo Li, Gang Guo, Li Chen, Sang H. Baeg

Microelectron. Reliab., 2018

Total ionizing dose and single event effects of 1 Mb HfO₂-based resistive-random-access memory.

Jinshun Bi, Yuan Duan, Kai Xi, Bo Li

Microelectron. Reliab., 2018

2017

SEU reduction effectiveness of common centroid layout in differential latch at 130-nm CMOS technology.

Haibin Wang, Ao Sheng, Shiqi Wang, Jinshun Bi, Li Chen, Xiaofeng Liu

Microelectron. Reliab., 2017

Total ionizing dose effects and annealing behaviors of HfO₂-based MOS capacitor.

Yannan Xu, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Ming Liu

Sci. China Inf. Sci., 2017

A 130nm 1Mb HfOx embedded RRAM macro using self-adaptive peripheral circuit system techniques for 1.6X work temperature range.

Feng Zhang, Dongyu Fan, Yuan Duan, Jin Li, Cong Fang, Yun Li, Xiaowei Han, Lan Dai, Cheng-Ying Chen, Jinshun Bi, Ming Liu, Meng-Fan Chang

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2017

2016

Study of total ionizing dose induced read bit errors in magneto-resistive random access memory.

Haohao Zhang, Jinshun Bi, Haibin Wang, Hongyang Hu, Jin Li, Lanlong Ji, Ming Liu

Microelectron. Reliab., 2016

2015

A Novel Built-in Current Sensor for N-WELL SET Detection.

Haibin Wang, Rui Liu, Li Chen, Jinshun Bi, Mulong Li, Yuanqing Li

J. Electron. Test., 2015

2014

Single Event Resilient Dynamic Logic Designs.

Haibin Wang, Mulong Li, Li Chen, Rui Liu, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Rita Fung, Jinshun Bi

J. Electron. Test., 2014