Jing Zhu
Orcid: 0000-0002-3776-4034Affiliations:
- Southeast University, National ASIC System Engineering Research Center, Nanjing, China
According to our database1,
Jing Zhu
authored at least 11 papers
between 2010 and 2024.
Collaborative distances:
Collaborative distances:
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Bibliography
2024
A 200-V Half-Bridge Monolithic GaN Power IC With High-Speed Level Shifter and dV<sub>S</sub>/dt Noise Immunity Enhancement Structure.
IEEE Trans. Very Large Scale Integr. Syst., March, 2024
2023
A 400-V Half Bridge Gate Driver for Normally-Off GaN HEMTs With Effective Dv/Dt Control and High Dv/Dt Immunity.
IEEE Trans. Ind. Electron., 2023
2021
Device and Circuit Design for Improving the Freewheeling Characteristics of High Voltage Monolithic Integrated Circuit.
IEEE Trans. Ind. Electron., 2021
Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices.
IEEE Trans. Ind. Electron., 2021
33.2 A 600V GaN Active Gate Driver with Dynamic Feedback Delay Compensation Technique Achieving 22.5% Turn-On Energy Saving.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2018
Noise Immunity and its Temperature Characteristics Study of the Capacitive-Loaded Level Shift Circuit for High Voltage Gate Drive IC.
IEEE Trans. Ind. Electron., 2018
2016
Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot.
IET Circuits Devices Syst., 2016
2014
Low-jitter, high-linearity current-controlled complementary metal oxide semiconductor relaxation oscillator with optimised floating capacitors.
IET Circuits Devices Syst., 2014
Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time.
IET Circuits Devices Syst., 2014
2013
A novel Operational Transconductance Amplifier with high Gm using improved differential current redistribution technique (DCRT).
Proceedings of the IEEE 10th International Conference on ASIC, 2013
2010
Investigation of the shift of hot spot in lateral diffused LDMOS under ESD conditions.
Microelectron. Reliab., 2010