Jin-Ping Ao

According to our database, Jin-Ping Ao authored at least 8 papers between 2005 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor.

Liang He, Yiqiang Ni, Liuan Li, Zhiyuan He, Xiaobo Li, Taofei Pu, Jin-Ping Ao

IEICE Electron. Express, 2021

2010

2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection.

Yusuke Ikawa, Yorihide Yuasa, Cheng-Yu Hu, Jin-Ping Ao, Yasuo Ohno

IEICE Trans. Electron., 2010

Buffer Layer Doping Concentration Measurement Using <i>V_T</i>-<i>V_SUB</i> Characteristics of GaN HEMT with p-GaN Substrate Layer.

Cheng-Yu Hu, Katsutoshi Nakatani, Hiroji Kawai, Jin-Ping Ao, Yasuo Ohno

IEICE Trans. Electron., 2010

2008

A Study on Ohmic Contact to Dry-Etched p-GaN.

Cheng-Yu Hu, Jin-Ping Ao, Masaya Okada, Yasuo Ohno

IEICE Trans. Electron., 2008

Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress.

Jin-Ping Ao, Yuya Yamaoka, Masaya Okada, Cheng-Yu Hu, Yasuo Ohno

IEICE Trans. Electron., 2008

2006

Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage.

Masaya Okada, Ryohei Takaki, Daigo Kikuta, Jin-Ping Ao, Yasuo Ohno

IEICE Trans. Electron., 2006

A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET.

Daigo Kikuta, Jin-Ping Ao, Junya Matsuda, Yasuo Ohno

IEICE Trans. Electron., 2006

2005

Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure.

Daigo Kikuta, Jin-Ping Ao, Yasuo Ohno

IEICE Trans. Electron., 2005