Jihe Lv

According to our database, Jihe Lv authored at least 3 papers between 2007 and 2008.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2008

LP-MOCVD growth of ternary B_xGa_1-_xAs epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH₃.

Qi Wang, Xiaomin Ren, Feihua Wang, Jianyou Feng, Jihe Lv, Jing Zhou, Shiwei Cai, Hui Huang, Yongqing Huang

Microelectron. J., 2008

2007

Temperature-controlled self-organized InP nanostructures grown on GaAs(100) substrate by MOCVD.

Jing Zhou, Xiaomin Ren, Qi Wang, Yongqing Huang, Jihe Lv, Hui Huang, Shiwei Cai

Microelectron. J., 2007

Epitaxial lateral overgrowth of InP/GaAs (100) heterostructures by metalorganic chemical vapor deposition.

Deping Xiong, Xiaomin Ren, Qi Wang, Aiguang Ren, Jing Zhou, Jihe Lv, Shiwei Cai, Hui Huang, Yongqing Huang

Microelectron. J., 2007