Jifa Hao

According to our database, Jifa Hao authored at least 8 papers between 2013 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Comparison of AC and DC BTI in SiC Power MOSFETs.

Amartya Ghosh, Osama O. Awadelkarim, Jifa Hao, Samia A. Suliman, Xinyu Wang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Revealing stresses for plasma induced damage detection in thick oxides.

Daniel Beckmeier, Jifa Hao, Jake Choi, Matt Ring

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Charge pumping source-drain current for gate oxide interface trap density in MOSFETs and LDMOS.

Jifa Hao, Yuhang Sun, Amartya Ghosh

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs.

Amartya Ghosh, Jifa Hao, Michael Cook, Chris Kendrick, Samia A. Suliman, Gavin D. R. Hall, Tom Kopley, Osama O. Awadelkarim

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs.

Jifa Hao, Amartya Ghosh, Mark Rinehimer, Joe Yedinak, Muhammad Ashraful Alam

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Hot carrier reliability in LDMOS devices.

Jifa Hao

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2014

High temperature bias-stress-induced instability in power trench-gated MOSFETs.

Jifa Hao, Mark Rioux, Samia A. Suliman, Osama O. Awadelkarim

Microelectron. Reliab., 2014

2013

Building-in reliability in BCD (Bipolar-CMOS-DMOS) technologies.

Jifa Hao, T. E. Kopley

Proceedings of the IEEE 10th International Conference on ASIC, 2013