Jhong-Yi Lai

According to our database, Jhong-Yi Lai authored at least 5 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect.

Xiu-Yuan Yang, Xing-Chen Mai, Shen-Li Chen, Yu-Jie Chung, Jhong-Yi Lai, Ting-En Lin

Proceedings of the International Conference on Consumer Electronics - Taiwan, 2023

2022

An Investigation of ESD-Enhancement by the Drain-side Embedded SCR Area Modulation for HV pLDMOSs.

Zhi-Wei Liu, Shen-Li Chen, Jhong-Yi Lai, Xing-Chen Mai, Yu-Jie Chung

Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2022

ESD Capability Analysis of High-voltage nLDMOSs by the Bulk Terminal Modulation.

Jhong-Yi Lai, Shen-Li Chen, Zhi-Wei Liu, Xing-Chen Mai, Yu-Jie Chung

Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2022

2021

Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the Drain-side SCR Engineering.

Tien-Yu Lan, Shen-Li Chen, Yu-Jie Zhou, Shi-Zhe Hong, Jhong-Yi Lai, Zhi-Wei Liu

Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021

ESD-Immunity Impact of HV pLDMOS with Drain-side Embedded Horizontal P-type Schottky Modulations.

Shi-Zhe Hong, Shen-Li Chen, Tien-Yu Lan, Yu-Jie Zhou, Zhi-Wei Liu, Jhong-Yi Lai

Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021