Jesús Urresti-Ibañez

According to our database, Jesús Urresti-Ibañez authored at least 9 papers between 2003 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

Overload robust IGBT design for SSCB application.

Ihsan Supono, Jesús Urresti, Alberto Castellazzi, David Flores

Microelectron. Reliab., 2014

3.3 kV PT-IGBT with voltage-sensor monolithically integrated.

Jesús Urresti, Salvador Hidalgo, David Flores, Daniel Fernández Hevia

IET Circuits Devices Syst., 2014

2012

Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling.

Ignasi Cortés, Xavier Perpiñà, Jesús Urresti, Xavier Jordà, José Rebollo

Microelectron. Reliab., 2012

2011

Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions.

Xavier Perpiñà, Jean-François Serviere, Jesús Urresti-Ibañez, Ignasi Cortés, Xavier Jordà, Salvador Hidalgo, José Rebollo, Michel Mermet-Guyennet

IEEE Trans. Ind. Electron., 2011

2008

IGBT module failure analysis in railway applications.

X. Perpiñà, Jean-François Serviere, Xavier Jordà, A. Fauquet, Salvador Hidalgo, Jesús Urresti-Ibañez, José Rebollo, Michel Mermet-Guyennet

Microelectron. Reliab., 2008

2007

Robustness test and failure analysis of IGBT modules during turn-off.

Jesús Urresti-Ibañez, Alberto Castellazzi, M. Piton, José Rebollo, Michel Mermet-Guyennet, Mauro Ciappa

Microelectron. Reliab., 2007

2005

Lateral punch-through TVS devices for on-chip protection in low-voltage applications.

Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, Ignasi Cortés, José Rebollo

Microelectron. Reliab., 2005

Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile.

Ignasi Cortés, Jaume Roig, David Flores, Jesús Urresti, Salvador Hidalgo, José Rebollo

Microelectron. Reliab., 2005

2003

Optimisation of very low voltage TVS protection devices.

Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, José Rebollo, I. Mazarredo

Microelectron. J., 2003