Jesús A. del Alamo

According to our database¹, Jesús A. del Alamo authored at least 22 papers between 1999 and 2022.

Collaborative distances:

Dijkstra number² of four.
Erdős number³ of four.

Timeline

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In proceedings

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PhD thesis

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On csauthors.net:

Bibliography

2022

Neural Network Training With Asymmetric Crosspoint Elements.

[BibT_eX]

[DOI]

Frontiers Artif. Intell., 2022

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Nanoscale InGaAs FinFETs: Band-to-Band Tunneling and Ballistic Transport.

[BibT_eX]

[DOI]

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019

Analysis and Optimization of Multi-Winding Toroidal Inductors for Use in Multilayered Technologies.

[BibT_eX]

[DOI]

Neus Vidal

José María López-Villegas

Jesús A. del Alamo

IEEE Access, 2019

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2015

Positive-bias temperature instability (PBTI) of GaN MOSFETs.

[BibT_eX]

[DOI]

Alex Guo

Jesús A. del Alamo

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress.

[BibT_eX]

[DOI]

Yufei Wu

Chia-Yu Chen

Jesús A. del Alamo

Microelectron. Reliab., 2014

2013

Nanometer-scale InGaAs field-effect transistors for THz and CMOS technologies.

[BibT_eX]

[DOI]

Jesús A. del Alamo

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Impact of gate placement on RF power degradation in GaN high electron mobility transistors.

[BibT_eX]

[DOI]

Jungwoo Joh

Jesús A. del Alamo

Microelectron. Reliab., 2012

Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs.

[BibT_eX]

[DOI]

Donghyun Jin

Jesús A. del Alamo

Microelectron. Reliab., 2012

Issues Faced in a Remote Instrumentation Laboratory.

[BibT_eX]

[DOI]

Shreya Malani

G. N. Srinivasa Prasanna

Proceedings of the 2012 IEEE Fourth International Conference on Technology for Education, 2012

2011

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2011

2010

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2010

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate.

[BibT_eX]

[DOI]

Sefa Demirtas

Jungwoo Joh

Jesús A. del Alamo

Microelectron. Reliab., 2010

Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2010

Simultaneous achievement of high performance and high reliability in a 38/77GHz InGaAs/AlGaAs PHEMT MMIC.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2010

2009

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2009

GaN HEMT reliability.

[BibT_eX]

[DOI]

Jesús A. del Alamo

Jungwoo Joh

Microelectron. Reliab., 2009

A Versatile Internet-Accessible Electronics Workbench with Troubleshooting Capabilities.

[BibT_eX]

[DOI]

Int. J. Online Eng., 2009

2008

The iLab Shared Architecture: A Web Services Infrastructure to Build Communities of Internet Accessible Laboratories.

[BibT_eX]

[DOI]

Proc. IEEE, 2008

2007

Book "Advances on remote laboratories and e-learning experiences".

[BibT_eX]

[DOI]

Jesús A. del Alamo

Int. J. Online Eng., 2007

1999

Breakdown in millimeter-wave power InP HEMTs: a comparison with GaAs PHEMT's.

[BibT_eX]

[DOI]

Jesús A. del Alamo

Mark H. Somerville

IEEE J. Solid State Circuits, 1999

Jesús A. del Alamo

Timeline

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On csauthors.net:

Bibliography

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