Jerry L. Hudgins

According to our database, Jerry L. Hudgins authored at least 6 papers between 2007 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2013

Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices

Tanya K. Gachovska, Bin Du, Jerry L. Hudgins, Enrico Santi

Synthesis Lectures on Power Electronics, Morgan & Claypool Publishers, ISBN: 978-3-031-02506-8, 2013

Modeling Bipolar Power Semiconductor Devices

Tanya K. Gachovska, Jerry L. Hudgins, Enrico Santi, Angus T. Bryant, Patrick R. Palmer

Synthesis Lectures on Power Electronics, Morgan & Claypool Publishers, ISBN: 978-3-031-02498-6, 2013

2008

A Physics-Based Model for a SiC JFET Device Accounting for the Mobility Dependence on Temperature and Electric Field.

Elisa Platania, Zhiyang Chen, Filippo Chimento, Liqing Lu, Enrico Santi, Angelo Raciti, Jerry L. Hudgins, H. Alan Mantooth, David C. Sheridan, J. Cassady

Proceedings of the Industry Applications Society Annual Meeting, 2008

2007

Simulating power semiconductor devices using variable model levels.

Enrico Santi, Liqubf Lu, Zhiyang Chen, Jerry L. Hudgins, H. Alan Mantooth

Proceedings of the 2007 Summer Computer Simulation Conference, 2007

Variable model levels for power semiconductor devices.

Enrico Santi, Jerry L. Hudgins, H. Alan Mantooth

Proceedings of the 2007 Summer Computer Simulation Conference, 2007

Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs.

L. Lu, Z. Chen, Angus T. Bryant, Enrico Santi, Jerry L. Hudgins, Patrick R. Palmer

Proceedings of the Conference Record of the 2007 IEEE Industry Applications Conference Forty-Second IAS Annual Meeting, 2007