Jeffrey W. Teng

Orcid: 0000-0003-1578-3426

According to our database1, Jeffrey W. Teng authored at least 10 papers between 2019 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic Temperatures.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
The Impact of BEOL Stress on SiGe HBTs at Cryogenic Temperatures.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022
Improved Electrical Reliability and Performance Enhancements in SiGe HBTs Using Dummy BEOL Metal Layers.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier Cells.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021
Analysis of the Impact of Radiation-Induced Optical Transients on Deep-Space Optical Communications Systems using PPM.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2021

Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020
Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

Circuit-Level Safe-Operating-Area of a High-Speed SiGe BiCMOS Wireline Driver.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019
DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019


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