Jeffery Wyss

According to our database, Jeffery Wyss authored at least 6 papers between 2001 and 2011.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2011

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs.

Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, L. Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss

Microelectron. Reliab., 2011

2004

Monitoring Methodology for TID Damaging of SDRAM Devices based on Retention Time Analysis.

Stefano Bertazzoni, Domenico Di Giovenale, Marcello Salmeri, Arianna Mencattini, Adelio Salsano, M. Florean, Jeffery Wyss, Ricardo Rando, Silvano Lora

Proceedings of the 19th IEEE International Symposium on Defect and Fault-Tolerance in VLSI Systems (DFT 2004), 2004

2003

Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment.

Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina

Microelectron. Reliab., 2003

Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact^,.

Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Candelori

Microelectron. Reliab., 2003

2002

The Reliability of New Generation Power MOSFETs in Radiation Environment.

Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Kaminksy

Microelectron. Reliab., 2002

2001

Non-destructive tester for single event burnout of power diodes.

Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, Jeffery Wyss

Microelectron. Reliab., 2001