Jee-Eun Yang

According to our database, Jee-Eun Yang authored at least 2 papers in 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer.

Sijung Yoo, Donghoon Kim, Duk-Hyun Choe, Hyun Jae Lee, Yunseong Lee, Sanghyun Jo, Yoonsang Park, Ki Hong Kim, Kyooho Jung, Moonil Jung, Kwang-Hee Lee, Jee-Eun Yang, Sangwook Kim, Seung-Geol Nam

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

A-IGZO FETs with High Current and Remarkable Stability for Vertical Channel Transistor(VCT) / 3D DRAM Applications.

Jee-Eun Yang, Younjin Jang, Narae Han, Ha-Jun Sung, Jung-kyun Kim, Youngkwan Cha, Kwang-Hee Lee, Kyooho Jung, Moonil Jung, Wonsok Lee, Min Hee Cho, Sangwook Kim

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024