Jean-Pierre Ousten

According to our database, Jean-Pierre Ousten authored at least 6 papers between 2001 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2018

Effect of power cycling tests on traps under the gate of Al₂O₃/AlGaN/GaN normally-ON devices.

Malika Elharizi, Fadi Zaki, Ali Ibrahim, Zoubir Khatir, Jean-Pierre Ousten

Microelectron. Reliab., 2018

Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling.

Nausicaa Dornic, Ali Ibrahim, Zoubir Khatir, Son-Ha Tran, Jean-Pierre Ousten, Jeffrey Ewanchuk, Stefan Mollov

Microelectron. Reliab., 2018

2016

Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions.

Ali Ibrahim, Jean-Pierre Ousten, Richard Lallemand, Zoubir Khatir

Microelectron. Reliab., 2016

2011

Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications.

Jean-Pierre Ousten, Zoubir Khatir

Microelectron. Reliab., 2011

2007

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions.

M. Bouarroudj, Zoubir Khatir, Jean-Pierre Ousten, F. Badel, Laurent Dupont, Stéphane Lefebvre

Microelectron. Reliab., 2007

2001

Power module lifetime estimation from chip temperature direct measurement in an automotive traction inverter.

Gerard Coquery, S. Carubelli, Jean-Pierre Ousten, Richard Lallemand, Frederic Lecoq, Dominique Lhotellier, V. de Viry, Philippe Dupuy

Microelectron. Reliab., 2001