Jean-Luc Ogier

According to our database1, Jean-Luc Ogier authored at least 14 papers between 2007 and 2017.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2017
Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology.
Microelectron. Reliab., 2017

2014
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories.
Microelectron. Reliab., 2014

Effect of AC stress on oxide TDDB and trapped charge in interface states.
Proceedings of the 2014 International Symposium on Integrated Circuits (ISIC), 2014

2013
Access resistor modelling for EEPROM's retention test vehicle.
Microelectron. Reliab., 2013

Effect of ions presence in the SiOCH inter metal dielectric structure.
Proceedings of the European Solid-State Device Research Conference, 2013

2012
Investigation of the effects of constant voltage stress on thin SiO<sub>2</sub> layers using dynamic measurement protocols.
Microelectron. Reliab., 2012

Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability.
J. Low Power Electron., 2012

2011
Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress.
Microelectron. Reliab., 2011

2009
Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities.
Microelectron. Reliab., 2009

2008
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications.
Microelectron. Reliab., 2008

Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO<sub>2</sub> thin oxides stressed to hard breakdown.
Microelectron. Reliab., 2008

2007
A new method to quantify retention-failed cells of an EEPROM CAST.
Microelectron. Reliab., 2007

A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories.
Microelectron. Reliab., 2007

Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions.
Microelectron. Reliab., 2007


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