Jean-François Nodin

According to our database, Jean-François Nodin authored at least 13 papers between 2012 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Experimental Demonstration of Non-Stateful In-Memory Logic With 1T1R OxRAM Valence Change Mechanism Memristors.

Henriette Padberg, Amir Regev, Giuseppe Piccolboni, Alessandro Bricalli, Gabriel Molas, Jean-Francois Nodin, Shahar Kvatinsky

IEEE Trans. Circuits Syst. II Express Briefs, January, 2024

2023

Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability.

Lucas Reganaz, Damien Deleruyelle, Quentin Rafhay, Joel Minguet Lopez, Niccolo Castellani, Jean-François Nodin, Alessandro Bricalli, Giuseppe Piccolboni, Gabriel Molas, François Andrieu

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Demonstration of SMT-reflow Immune and SCA-resilient PUF on 28nm RRAM device array.

Vivek Parmar, Sandeep Kaur Kingra, Deepak Verma, Digamber Pandey, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Pares, Laurent Grenouillet, Jean-François Nodin, Manan Suri

Proceedings of the IEEE International Memory Workshop, 2023

2022

A High Throughput Generative Vector Autoregression Model for Stochastic Synapses.

Tyler Hennen, A. Elias, Jean-Francois Nodin, Gabriel Molas, Rainer Waser, Dirk J. Wouters, Daniel Bedau

CoRR, 2022

Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations.

Eduardo Esmanhotto, Tifenn Hirtzlin, Niccolo Castellani, S. Martin, Bastien Giraud, François Andrieu, Jean-François Nodin, Damien Querlioz, Jean-Michel Portal, Elisa Vianello

Proceedings of the IEEE International Reliability Physics Symposium, 2022

High temperature stability embedded ReRAM for 2x nm node and beyond.

Gabriel Molas, Giuseppe Piccolboni, Alessandro Bricalli, Anthonin Verdy, I. Naot, Y. Cohen, Amir Regev, I. Naveh, Damien Deleruyelle, Quentin Rafhay, Niccolo Castellani, Lucas Reganaz, Alain Persico, R. Segaud, Jean-François Nodin, Valentina Meli, S. Martin, François Andrieu, Laurent Grenouillet

Proceedings of the IEEE International Memory Workshop, 2022

2021

A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification.

Wolfgang Goes, D. Green, Philippe Blaise, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Molas, Jean-Francois Nodin

Proceedings of the IEEE International Memory Workshop, 2021

2020

Fully-Integrated Spiking Neural Network Using SiOx-Based RRAM as Synaptic Device.

Amir Regev, Alessandro Bricalli, Giuseppe Piccolboni, Alexandre Valentian, Thomas Mesquida, Gabriel Molas, Jean-François Nodin

Proceedings of the 2nd IEEE International Conference on Artificial Intelligence Circuits and Systems, 2020

2018

Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications.

Gilbert Sassine, Cecile Nail, Luc Tillie, Diego Alfaro Robayo, Alexandre Levisse, Carlo Cagli, Khalil El Hajjam, Jean-Francois Nodin, Elisa Vianello, Mathieu Bernard, Gabriel Molas, Etienne Nowak

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2013

Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design.

Elisa Vianello, Olivier Thomas, M. Harrand, Santhosh Onkaraiah, T. Cabout, Boubacar Traore, T. Diokh, Houcine Oucheikh, Luca Perniola, Gabriel Molas, Philippe Blaise, J.-F. Nodin, Eric Jalaguier, Barbara De Salvo

Proceedings of 2013 International Conference on IC Design & Technology, 2013

On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations.

Boubacar Traore, Elisa Vianello, Gabriel Molas, Marc Gely, Jean-François Nodin, Eric Jalaguier, Philippe Blaise, Barbara De Salvo, Leonardo R. C. Fonseca, Kanhao Xue, Yoshio Nishi

Proceedings of the European Solid-State Device Research Conference, 2013

2012

High temperature reliability of μtrench Phase-Change Memory devices.

Gabriele Navarro, Sarra Souiki, Alain Persico, Veronique Sousa, Jean-François Nodin, Carine Jahan, François Aussenac, Vincent Delaye, Olga Cueto, Luca Perniola, Barbara De Salvo

Microelectron. Reliab., 2012

Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption.

Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012