Jan Grünenpütt

According to our database, Jan Grünenpütt authored at least 7 papers between 2013 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.

Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz

Proceedings of the IEEE International Reliability Physics Symposium, 2022

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.

Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2018

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs.

Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2018

2017

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.

Andreas Graff, Michél Simon-Najasek, Frank Altmann, Ján Kuzmík, Dagmar Gregusová, S. Hascik, Helmut Jung, T. Baur, Jan Grünenpütt, Hervé Blanck

Microelectron. Reliab., 2017

2014

Proton induced trapping effect on space compatible GaN HEMTs.

Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni

Microelectron. Reliab., 2014

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.

Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni

Microelectron. Reliab., 2014

2013

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.

Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat

Microelectron. Reliab., 2013