James R. Shealy

According to our database, James R. Shealy authored at least 4 papers between 2003 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2016

Single crystal aluminum nitride film bulk acoustic resonators.

James B. Shealy, Jeffrey B. Shealy, Pinal Patel, Michael D. Hodge, Rama Vetury, James R. Shealy

Proceedings of the 2016 IEEE Radio and Wireless Symposium, 2016

2009

Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT.

A. Brannick, N. A. Zakhleniuk, B. K. Ridley, Lester F. Eastman, James R. Shealy, William J. Schaff

Microelectron. J., 2009

2003

Hot electron induced degradation of undoped AlGaN/GaN HFETs.

Hyungtak Kim, Alexei Vertiatchikh, Richard M. Thompson, Vinayak Tilak, Thomas R. Prunty, James R. Shealy, Lester F. Eastman

Microelectron. Reliab., 2003

High-power monolithic AlGaN/GaN HEMT oscillator.

Valery S. Kaper, Vinayak Tilak, Hyungtak Kim, Alexei Vertiatchikh, Richard M. Thompson, Thomas R. Prunty, Lester F. Eastman, James R. Shealy

IEEE J. Solid State Circuits, 2003