James H. Stathis

According to our database, James H. Stathis authored at least 25 papers between 2002 and 2019.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2019

Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL Applications.

Ernest Y. Wu, Baozhen Li, James H. Stathis, Andrew Kim

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor.

Miaomiao Wang, Jingyun Zhang, Huimei Zhou, Richard G. Southwick, Robin Hsin Kuo Chao, Xin Miao, Veeraraghavan S. Basker, Tenko Yamashita, Dechao Guo, Gauri Karve, Huiming Bu, James H. Stathis

Proceedings of the IEEE International Reliability Physics Symposium, 2019

On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs.

Narendra Parihar, Uma Sharma, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery.

Elnatan Mataev, James H. Stathis, Giuseppe La Rosa, Barry P. Linder

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Controversial issues in negative bias temperature instability.

James H. Stathis, Souvik Mahapatra, Tibor Grasser

Microelectron. Reliab., 2018

Elapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications.

Ernest Y. Wu, Andrew Kim, Baozhen Li, James H. Stathis

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics.

Miaomiao Wang, Richard G. Southwick, Kangguo Cheng, James H. Stathis

Proceedings of the IEEE International Reliability Physics Symposium, 2018

The physics of NBTI: What do we really know?

James H. Stathis

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Hot carrier reliability in ultra-scaled sige channel p-FinFETs.

Miaomiao Wang, Xin Miao, James H. Stathis, Richard G. Southwick

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2015

A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL).

Ernest Y. Wu, James H. Stathis, Baozhen Li, Barry P. Linder, Kai Zhao, Griselda Bonilla

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET.

Miaomiao Wang, Zuoguang Liu, Tenko Yamashita, James H. Stathis, Chia-Yu Chen

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Analyzing path delays for accelerated testing of logic chips.

Emily Ray, Barry P. Linder, Raphael Robertazzi, Kevin Stawiasz, Alan J. Weger, Emmanuel Yashchin, James H. Stathis, Peilin Song

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

The resilience wall: Cross-layer solution strategies.

Subhasish Mitra, Pradip Bose, Eric Cheng, Chen-Yong Cher, Hyungmin Cho, Rajiv V. Joshi, Young Moon Kim, Charles R. Lefurgy, Yanjing Li, Kenneth P. Rodbell, Kevin Skadron, James H. Stathis, Lukasz G. Szafaryn

Proceedings of the Technical Papers of 2014 International Symposium on VLSI Design, 2014

2010

Reliability of advanced high-k/metal-gate n-FET devices.

James H. Stathis, M. Wang, K. Zhao

Microelectron. Reliab., 2010

2009

Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability.

Aditya Bansal, Rahul M. Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis, Ching-Te Chuang

Microelectron. Reliab., 2009

2008

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks.

R. Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, S. A. Krishnan, Chadwin D. Young, Rino Choi, Gennadi Bersuker, James H. Stathis

Microelectron. Reliab., 2008

2007

Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror.

Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis

Microelectron. Reliab., 2007

Influence of the SiO₂ layer thickness on the degradation of HfO₂/SiO₂ stacks subjected to static and dynamic stress conditions.

Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis

Microelectron. Reliab., 2007

2006

The negative bias temperature instability in MOS devices: A review.

James H. Stathis, Sufi Zafar

Microelectron. Reliab., 2006

2003

Circuit implications of gate oxide breakdown.

James H. Stathis, Rosana Rodríguez, Barry P. Linder

Microelectron. Reliab., 2003

Reliability of ultra-thin oxides in CMOS circuits.

James H. Stathis, Barry P. Linder, Rosana Rodríguez, Salvatore Lombardo

Microelectron. Reliab., 2003

Influence and model of gate oxide breakdown on CMOS inverters.

Rosana Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang

Microelectron. Reliab., 2003

2002

Analysis of the effect of the gate oxide breakdown on SRAM stability.

Rosana Rodríguez, James H. Stathis, Barry P. Linder, Steven P. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, Azeez J. Bhavnagarwala, Salvatore Lombardo

Microelectron. Reliab., 2002

Dependence of Post-Breakdown Conduction on Gate Oxide Thickness.

Salvatore Lombardo, James H. Stathis, Barry P. Linder

Microelectron. Reliab., 2002

Reliability limits for the gate insulator in CMOS technology.

James H. Stathis

IBM J. Res. Dev., 2002