James C. Gallagher

According to our database, James C. Gallagher authored at least 3 papers between 2018 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices.

James Spencer Lundh, Hannah N. Masten, Kohei Sasaki, Alan G. Jacobs, Zhe Cheng, Joseph Spencer, Lei Chen, James C. Gallagher, Andrew D. Koehler, Keita Konishi, Samuel Graham, Akito Kuramata, Karl D. Hobart, Marko J. Tadjer

Proceedings of the Device Research Conference, 2022

2019

Diamond Superjunction (SJ) Process Development: Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES).

Shamima Afroz, Virginia Wheeler, Marko J. Tadjer, James C. Gallagher, Geoffrey Foster, Karl D. Hobart, Brian Novak, Ken A. Nagamatsu, Kevin Frey, Patrick Shea, Rob Howell, Josephine Chang, Andrew D. Koehler, Tatyana Feygelson

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

Thermal Performance Improvement of GaN-on-Diamond High Electron Mobility Transistors.

Marko J. Tadjer, Travis J. Anderson, James C. Gallagher, Peter E. Raad, Pavel L. Komarov, Andrew D. Koehler, Karl D. Hobart, Fritz J. Kub

Proceedings of the 76th Device Research Conference, 2018