Jaeyoun Youn
According to our database1,
Jaeyoun Youn
authored at least 6 papers
between 2012 and 2024.
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Collaborative distances:
Timeline
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2024
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Book In proceedings Article PhD thesis Dataset OtherLinks
On csauthors.net:
Bibliography
2024
A 4 ns Settling Time FVF-Based Fast LDO Using Bandwidth Extension Techniques for HBM3.
IEEE J. Solid State Circuits, October, 2024
2023
A 16 GB 1024 GB/s HBM3 DRAM With Source-Synchronized Bus Design and On-Die Error Control Scheme for Enhanced RAS Features.
IEEE J. Solid State Circuits, 2023
A 4ns Settling Time FVF-Based Fast LDO Using Bandwidth Extension Techniques for HBM3.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2023
2022
A 16 GB 1024 GB/s HBM3 DRAM with On-Die Error Control Scheme for Enhanced RAS Features.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
2021
25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2012
A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012