Jae-Sung Rieh

According to our database, Jae-Sung Rieh authored at least 16 papers between 2002 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range.

Sooyeon Kim, Daekeun Yoon, Jungsoo Kim, Junghwan Yoo, Kiryong Song, Jae-Sung Rieh

IEEE Trans. Circuits Syst. II Express Briefs, 2022

2021

A 253-280 GHz Wide Tuning Range VCO with -3.5 dBm Peak Output Power in 40-nm CMOS.

Surajit Kumar Nath, Junghwan Yoo, Jae-Sung Rieh, Daekeun Yoon

Proceedings of the 47th ESSCIRC 2021, 2021

2019

WR-3 Band Integrated Circuits in InP HBT Technology.

Sanggeun Jeon, Jae-Sung Rieh, Moonil Kim

Proceedings of the IEEE International Symposium on Circuits and Systems, 2019

2015

D²ART: Direct Data Accessing from Passive RFID Tag for infra-less, contact-less, and battery-less pervasive computing.

Joon Goo Lee, Seon Wook Kim, Dong-Hyun Kim, Younga Cho, Jae-Sung Rieh, Gyusung Kang, Jongsun Park, Hokyu Lee, Sejin Park, Chulwoo Kim

Microprocess. Microsystems, 2015

2014

A Triple-Push Voltage Controlled Oscillator in 0.13-µm RFCMOS Technology Operating Near 177GHz.

Namhyung Kim, Kyungmin Kim, Jae-Sung Rieh

IEICE Trans. Electron., 2014

Bulk acoustic wave resonator with suppressed energy loss using improved lateral structure.

Jea-Shik Shin, Insang Song, Moon-Chul Lee, Chul-Soo Kim, Sang Uk Son, Duck-Hwan Kim, Ho-Soo Park, Jing Cui, Yujie Ai, Sungwoo Hwang, Jae-Sung Rieh

IEICE Electron. Express, 2014

2012

The Effect of Device Layout Schemes on RF Performance of Multi-Finger MOSFETs.

Yongho Oh, Jae-Sung Rieh

IEICE Trans. Electron., 2012

Si-based D-band frequency conversion circuits.

Dong-Hyun Kim, Jongwon Yun, Jae-Sung Rieh

Proceedings of the International SoC Design Conference, 2012

Recent progress in terahertz monolithic integrated circuits.

Moonil Kim, Jae-Sung Rieh, Sanggeun Jeon

Proceedings of the 2012 IEEE International Symposium on Circuits and Systems, 2012

2011

A V-Band Common-Source Low Noise Amplifier in a 0.13 µm RF CMOS Technology and the Effect of Dummy Fills.

Sungjin Kim, Hyunchul Kim, Dong-Hyun Kim, Sanggeun Jeon, Yeocho Yoon, Jae-Sung Rieh

IEICE Trans. Electron., 2011

2010

A Low Power V-Band Injection-Locked Frequency Divider in 0.13-µm Si RFCMOS Technology.

Seungwoo Seo, Jae-Sung Rieh

IEICE Trans. Electron., 2010

2005

Scaling of SiGe Heterojunction Bipolar Transistors.

Jae-Sung Rieh, David R. Greenberg, Andreas Stricker, Greg G. Freeman

Proc. IEEE, 2005

2004

Reliability and performance scaling of very high speed SiGe HBTs.

Greg G. Freeman, Jae-Sung Rieh, Zhijian Yang, Fernando J. Guarín

Microelectron. Reliab., 2004

2003

Product applications and technology directions with SiGe BiCMOS.

Alvin J. Joseph, James S. Dunn, Greg G. Freeman, David L. Harame, Douglas Coolbaugh, Robert A. Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae-Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang

IEEE J. Solid State Circuits, 2003

Foundation of rf CMOS and SiGe BiCMOS technologies.

James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg G. Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson

IBM J. Res. Dev., 2003

2002

40-Gb/s circuits built from a 120-GHz f_T SiGe technology.

Greg G. Freeman, Mounir Meghelli, Young Kwark, Steven Zier, Alexander V. Rylyakov, Michael Sorna, Todd Tanji, Oswin M. Schreiber, Keith Walter, Jae-Sung Rieh, Basanth Jagannathan, Alvin J. Joseph, Seshadri Subbanna

IEEE J. Solid State Circuits, 2002