Jack M. Higman

According to our database, Jack M. Higman authored at least 7 papers between 1989 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Bias-Dependent Variation in FinFET SRAM.

Randy W. Mann, Meixiong Zhao, Oh Sung Kwon, Xi Cao, Sanjay Parihar, Muhammed Ahosan Ul Karim, Jack M. Higman, Joseph Versaggi, Rick Carter

IEEE Trans. Very Large Scale Integr. Syst., 2020

An Energy-Efficient and High Throughput in-Memory Computing Bit-Cell With Excellent Robustness Under Process Variations for Binary Neural Network.

Gobinda Saha, Zhewei Jiang, Sanjay Parihar, Xi Cao, Jack M. Higman, Muhammed Ahosan Ul Karim

IEEE Access, 2020

2019

An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM.

Randy W. Mann, Meixiong Zhao, Sanjay Parihar, Qun Gao, Ankur Arya, Carl Radens, Shesh Mani Pandey, Joseph Versaggi, Jack M. Higman, Rick Carter

IEEE Trans. Very Large Scale Integr. Syst., 2019

2018

A Simplified Yield Model for SRAM Repair in Advanced Technology.

Xiaoyuan Qi, Raymond J. Rosner, John Hopkins, Jack M. Higman, Rick Mewhirter, Aaron Sinnott, Binod Kumar G. Nair, Ishtiaq Ahsan, Mark Lagus

IEEE Trans. Very Large Scale Integr. Syst., 2018

2015

SRAM Vmax stability considerations.

David Burnett, Sriram Balasubramanian, Vivek Joshi, Sanjay Parihar, Jack M. Higman, C. Weintraub

Proceedings of the IEEE International Reliability Physics Symposium, 2015

1993

A numerical method to compute isotropic band models from anisotropic semiconductor band structures.

Antonio Abramo, Franco Venturi, Enrico Sangiorgi, Jack M. Higman, Bruno Riccò

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993

1989

Theoretical studies of high field electron transport in silicon devices

Jack M. Higman

PhD thesis, 1989