J. Yun

According to our database, J. Yun authored at least 4 papers between 2013 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Single-Power-Supply Compatible Cryogenic In0.8Ga0.2As Quantum-well HEMTs with Record Combination of high-frequency and low-noise performance for quantum-computins applications.

J.-H. Yoo, Y.-S. Jeon, S.-W. Son, I.-G. Lee, H.-B. Jo, S.-M. Choi, M.-S. Yu, W.-S. Park, H.-J. Kim, H.-J. Lee, S.-P. Son, S. K. Kim, J. Yun, J.-P. Shim, H. Jang, K. Lee, Y. Jeong, T. Kim, C.-S. Shin, T.-W. Kim, J.-H. Lee, K.-S. Seo, K. Yang, D.-H. Kim

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling.

J.-H. Yoo, H.-B. Jo, I.-G. Lee, S.-M. Choi, J.-M. Baek, S. T. Lee, H. Jang, M. W. Kong, H. H. Kim, H. J. Lee, H.-J. Kim, H.-S. Jeong, W.-S. Park, D.-H. Ko, S. H. Shin, H.-M. Kwon, S. K. Kim, J. G. Kim, J. Yun, T. Kim, K.-Y. Shin, T.-W. Kim, J.-K. Shin, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets.

H.-B. Jo, I.-G. Lee, J.-M. Baek, S. T. Lee, S.-M. Choi, H.-J. Kim, H.-S. Jeong, W.-S. Park, J.-H. Yoo, H.-Y. Lee, D. Y. Yun, S.-W. Son, D.-H. Ko, Tae-Woo Kim, H.-M. Kwon, S.-K. Kim, Jun-Gyu Kim, J. Yun, T. Kim, J. H. Lee, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2013

SON for Government Spectrum Applications.

R. Menon, J. Yun, E. Gormley, C. Immendorf

Proceedings of the 32th IEEE Military Communications Conference, 2013