J. Misiewicz

According to our database, J. Misiewicz authored at least 7 papers between 2003 and 2009.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2009

Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures.

R. Kudrawiec, M. Motyka, J. Misiewicz, B. Paszkiewicz, R. Paszkiewicz, M. Tlaczala

Microelectron. J., 2009

Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions.

R. Kudrawiec, M. Gladysiewicz, M. Motyka, J. Misiewicz, G. Cywinski, Marcin Siekacz, Czeslaw Skierbiszewski

Microelectron. J., 2009

Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells.

R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, G. Cywinski, Marcin Siekacz, Czeslaw Skierbiszewski

Microelectron. J., 2009

2005

Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy.

J. Misiewicz, R. Kudrawiec, Marcin Syperek, R. Paszkiewicz, B. Paszkiewicz, M. Tlaczala

Microelectron. J., 2005

Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells.

J. Misiewicz, R. Kudrawiec, M. Motyka, J. Andrzejewski, D. Gollub, Alfred Forchel

Microelectron. J., 2005

2003

Influence of nitrogen on carrier localization in InGaAsN/GaAs single quantum wells.

J. Misiewicz, P. Sitarek, K. Ryczko, R. Kudrawiec, M. Fischer, M. Reinhardt, Alfred Forchel

Microelectron. J., 2003

Photomodulation spectroscopy applied to low-dimensional semiconductor structures.

J. Misiewicz, Grzegorz Sek, R. Kudrawiec, K. Ryczko, D. Gollub, Johann Peter Reithmaier, Alfred Forchel

Microelectron. J., 2003