J. H. Song

According to our database, J. H. Song authored at least 4 papers between 2023 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A Novel Method for Extracting Asymmetric Source and Drain Resistance in IGZO Vertical Channel Transistors.

S. W. Yoo, Y. Lee, W. J. Jung, H. Kim, S. Byeon, M. Kim, J. Lee, T. Lee, M. J. Hong, Y. G. Song, S. Lee, M. Terai, K. J. Yoo, C. Sung, W. Lee, M. H. Cho, D. Kim, D. Ha, S. Ahn, J. H. Song

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Device Design and Reliability of GAA MBCFET.

M. Kang, M. Chang, Y. Park, C. Noh, S. H. Hong, B. Park, Y. H. Park, Y. C. Jung, W. S. Lim, G. H. Kim, Y. Lee, H. Yang, D. Shin, J. G. Yang, K. H. Cho, W. C. Jeong, H.-J. Cho, Wook-Hyeon Kwon, D. W. Kim, K. Rim, J. H. Song

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Exploring Innovative IGZO-channel based DRAM Cell Architectures and Key Technologies for Sub-10nm Node.

Daewon Ha, Y. Lee, S. Yoo, W. Lee, M. H. Cho, K. Yoo, S. M. Lee, S. Lee, M. Terai, T. H. Lee, J. H. Bae, K. J. Moon, C. Sung, M. Hong, D. G. Cho, K. Lee, S. W. Park, K. Park, Bong Jin Kuh, S. Hyun, Sujin Ahn, J. H. Song

Proceedings of the IEEE International Memory Workshop, 2024

2023

Highly Reliable and Manufacturable MRAM embedded in 14nm FinFET node.

S. Ko, J. H. Park, J. H. Bak, H. Jung, J. Shim, D. S. Kim, W. Lim, D.-E. Jeong, J. H. Lee, K. Lee, J.-H. Park, Y. Kim, C. Kim, J. H. Jeong, C. Y. Lee, S. H. Han, Y. Ji, S. H. Hwang, Hye Ji Shin, K. Lee, Y. J. Song, Yu-Gyun Shin, J. H. Song

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023