J. C. Vildeuil

According to our database, J. C. Vildeuil authored at least 5 papers between 2004 and 2007.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of four.

2007

Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements.

G. Néau, Frédéric Martinez, M. Valenza, J. C. Vildeuil, E. Vincent, Frédéric Boeuf, F. Payet, K. Rochereau

Microelectron. Reliab., 2007

Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization.

Cédric Leyris, Frédéric Martinez, M. Valenza, Alain Hoffmann, J. C. Vildeuil

Microelectron. Reliab., 2007

N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis.

Cédric Leyris, Frédéric Martinez, Alain Hoffmann, M. Valenza, J. C. Vildeuil

Microelectron. Reliab., 2007

2005

Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors.

P. Benoit, Jérémy Raoult, C. Delseny, Fabien Pascal, L. Snadny, J. C. Vildeuil, M. Marin, B. Martinet, D. Cottin, Olivier Noblanc

Microelectron. Reliab., 2005

2004

Low frequency noise characterization in 0.13 mum p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 mum technologies on 1/f noise.

M. Marin, Y. Akue Allogo, M. de Murcia, P. Llinares, J. C. Vildeuil

Microelectron. Reliab., 2004