Ivan Berdalovic

According to our database1, Ivan Berdalovic authored at least 10 papers between 2016 and 2024.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Temperature-Dependent Noise Performance of Single-Photon Avalanche Diodes and Active Quenching Circuits in 180-nm HV CMOS.
Proceedings of the 47th MIPRO ICT and Electronics Convention, 2024

Impact of Buffer Al-Content on 2DEG Mobility and Scattering Mechanisms in Double-Heterostructure GaN HEMTs.
Proceedings of the 47th MIPRO ICT and Electronics Convention, 2024

Performance Limitations of GaN HEMTs with Quaternary InAlGaN and ScAlGaN Barrier Layers.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2023
Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-Resistance.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022
Layout-Dependent Noise Performance of Single-Photon Avalanche Diodes in 180 nm High-Voltage CMOS Technology.
Proceedings of the 45th Jubilee International Convention on Information, 2022

Numerical Optimization of On-Resistance and Transconductance in Depletion-Mode and Enhancement-Mode GaN HEMTs.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021
Modelling of Electrostatics and Transport in GaN-Based HEMTs under Non-Equilibrium Conditions.
Proceedings of the 44th International Convention on Information, 2021

Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020
On the modelling of interface roughness scattering in AlGaN/GaN heterostructures.
Proceedings of the 43rd International Convention on Information, 2020

2016
Design of passive-quenching active-reset circuit with adjustable hold-off time for single-photon avalanche diodes.
Proceedings of the 39th International Convention on Information and Communication Technology, 2016


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