Isabella Rossetto

According to our database, Isabella Rossetto authored at least 14 papers between 2011 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.

M. Boito, Manuel Fregolent, Carlo De Santi, A. Abbisogni, S. Smerzi, Isabella Rossetto, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2017

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs.

Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2017

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.

Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2017

2016

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.

Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2016

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.

Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale

Microelectron. Reliab., 2016

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.

Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni

Microelectron. Reliab., 2016

2015

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs.

Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2015

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.

Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2015

2014

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs.

Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2014

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.

Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.

Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2013

Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.

Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2013

2012

Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits.

Isabella Rossetto, Matteo Meneghini, Tiziana Tomasi, Dai Yufeng, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2012

2011

ESD sensitivity of a GaAs MMIC microwave power amplifier.

Augusto Tazzoli, Isabella Rossetto, Enrico Zanoni, Dai Yufeng, Tiziana Tomasi, Gaudenzio Meneghesso

Microelectron. Reliab., 2011