Isabella Rossetto

According to our database1, Isabella Rossetto authored at least 14 papers between 2011 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2024
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2017
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs.
Microelectron. Reliab., 2017

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.
Microelectron. Reliab., 2017

2016
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.
Microelectron. Reliab., 2016

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.
Microelectron. Reliab., 2016

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.
Microelectron. Reliab., 2016

2015
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs.
Microelectron. Reliab., 2015

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.
Microelectron. Reliab., 2015

2014
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs.
Microelectron. Reliab., 2014

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.
Proceedings of the 44th European Solid State Device Research Conference, 2014

2013
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.
Microelectron. Reliab., 2013

Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.
Microelectron. Reliab., 2013

2012
Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits.
Microelectron. Reliab., 2012

2011
ESD sensitivity of a GaAs MMIC microwave power amplifier.
Microelectron. Reliab., 2011


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