Insaf Lahbib

According to our database1, Insaf Lahbib authored at least 2 papers between 2017 and 2019.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Links

On csauthors.net:

Bibliography

2019
Comparison of modeling approaches for transistor degradation: model card adaptations vs subcircuits.
Proceedings of the 49th European Solid-State Device Research Conference, 2019

2017
Simulation and analysis of DC and RF performances degradation of NMOS transistors under hot carrier injection mechanism.
Proceedings of the IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, Beijing, China, October 29, 2017


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