Inryul Lee
According to our database1,
Inryul Lee
authored at least 2 papers
between 2017 and 2019.
Collaborative distances:
Collaborative distances:
Timeline
2017
2018
2019
0
1
2
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Bibliography
2019
A 512Gb 3-bit/Cell 3D 6<sup>th</sup>-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019
2017
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017