In-Hwan Ji

According to our database, In-Hwan Ji authored at least 4 papers between 2006 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes.

In-Hwan Ji, Anoop Mathew, Jae-Hyung Park, Neal Oldham, Matthew McCain, Shadi Sabri, Edward Van Brunt, Brett Hull, Daniel J. Lichtenwalner, Donald A. Gajewski, John W. Palmour

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2019

SiC Power MOSFETs: Designing for Reliability in Wide-Bandgap Semiconductors.

Kevin Matocha, In-Hwan Ji, Xuning Zhang, Sauvik Chowdhury

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2008

A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor.

In-Hwan Ji, Min-Woo Ha, Young-Hwan Choi, Seung-Chul Lee, Chong-Man Yun, Min-Koo Han

Microelectron. J., 2008

2006

A New Emitter Switched Thyristor (EST) employing Trench Segmented p-base.

In-Hwan Ji, Byung-Chul Jeon, Young-Hwan Choi, Yearn-Ik Choi, Min-Koo Han

Microelectron. J., 2006