Ilgweon Kim

According to our database, Ilgweon Kim authored at least 4 papers between 2016 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

A Metal Dual Work-Function Gate (MDWG) for the Continuous Scaling of DRAM Cell Transistors.

Junsoo Kim, Hyun Jung Lee, Sung Ho Jang, Jun Bum Lee, Ilgweon Kim, Jeonghoon Oh, Jemin Park, Jaihyuk Song

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor.

Moonyoung Jeong, Sangho Lee, Yootak Jun, Kiseok Lee, Seokhan Park, Jeonghoon Oh, Ilgweon Kim, Jemin Park

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2018

A sub-0.85V, 6.4GBP/S/Pin TX-Interleaved Transceiver with Fast Wake-Up Time Using 2-Step Charging Control and VOHCalibration in 20NM DRAM Process.

Jin-Hyeok Baek, Chang-Kyo Lee, Kiho Kim, Daesik Moon, Gil-Hoon Cha, Jin-Seok Heo, Min-Su Ahn, Dong-Ju Kim, Jae-Joon Song, Seokhong Kwon, Jongmin Kim, Kyung-Soo Kim, Jinoh Ahn, Jeong-Sik Nam, Byung-Cheol Kim, Jeong-Hyeon Cho, Jeonghoon Oh, Seung-Jun Bae, Indal Song, Seok-Hun Hyun, Ilgweon Kim, Hyuck-Joon Kwon, Young-Soo Sohn, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang

Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

2016

Off-state degradation with ac bias in PMOSFET.

Segeun Park, Hyuckchai Jung, Jeonghoon Oh, Ilgweon Kim, Hyoungsun Hong, Gyoyoung Jin, Yonghan Roh

Microelectron. Reliab., 2016