I. V. Grekhov

According to our database, I. V. Grekhov authored at least 4 papers between 2001 and 2007.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2007

Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon.

I. V. Grekhov, G. G. Kareva, S. E. Tyaginov, M. I. Vexler

Microelectron. Reliab., 2007

2006

The post-damage behavior of a MOS tunnel emitter transistor.

S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov

Microelectron. Reliab., 2006

Tunnel charge transport within silicon in reversely-biased MOS tunnel structures.

M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov

Microelectron. J., 2006

2001

Threshold energies in the light emission characteristics of silicon MOS tunnel diodes.

N. Asli, M. I. Vexler, A. F. Shulekin, P. Douglas Yoder, I. V. Grekhov, Peter Seegebrecht

Microelectron. Reliab., 2001