I. N. Osiyuk

According to our database, I. N. Osiyuk authored at least 2 papers between 2002 and 2007.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2007

Charge trapping characterization of MOCVD HfO₂/p-Si interfaces at cryogenic temperatures.

I. P. Tyagulskyy, I. N. Osiyuk, V. S. Lysenko, A. N. Nazarov, Steve Hall, Octavian Buiu, Y. Lu, Richard Potter, Paul R. Chalker

Microelectron. Reliab., 2007

2002

Charge trapping and degradation in Ge⁺ ion implanted SiO₂ layers during high-field electron injection.

A. N. Nazarov, I. N. Osiyuk, V. S. Lysenko, T. Gebel, Lars Rebohle, W. Skorupa

Microelectron. Reliab., 2002