Hyunyoung Shim

According to our database, Hyunyoung Shim authored at least 2 papers between 2012 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide.

Jongwoo Kim, Hyungjun Jo, Yonggyu Cho, Hyunyoung Shim, Jaesung Sim, Hyungcheol Shin

IEICE Electron. Express, 2022

2012

Novel integration technologies for improving reliability in NAND flash memory.

Hyunyoung Shim, Myoungkwan Cho, Kunok Ahn, Gihyun Bae, Sungwook Park

Proceedings of the 2012 IEEE International Symposium on Circuits and Systems, 2012