Hyunsung Shin

Orcid: 0000-0001-8104-3368

According to our database1, Hyunsung Shin authored at least 8 papers between 2017 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2024

2021
25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021

Hardware Architecture and Software Stack for PIM Based on Commercial DRAM Technology : Industrial Product.
Proceedings of the 48th ACM/IEEE Annual International Symposium on Computer Architecture, 2021

Aquabolt-XL: Samsung HBM2-PIM with in-memory processing for ML accelerators and beyond.
Proceedings of the IEEE Hot Chips 33 Symposium, 2021

2020
McDRAM v2: In-Dynamic Random Access Memory Systolic Array Accelerator to Address the Large Model Problem in Deep Neural Networks on the Edge.
IEEE Access, 2020

2018
McDRAM: Low Latency and Energy-Efficient Matrix Computations in DRAM.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2018

2017
Main Memory in HPC: Do We Need More or Could We Live with Less?
ACM Trans. Archit. Code Optim., 2017

Defect Analysis and Cost-Effective Resilience Architecture for Future DRAM Devices.
Proceedings of the 2017 IEEE International Symposium on High Performance Computer Architecture, 2017


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