Hyunjong Jin

According to our database, Hyunjong Jin authored at least 3 papers between 2010 and 2014.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2014

19.2 A 93.4mm² 64Gb MLC NAND-flash memory with 16nm CMOS technology.

Sungdae Choi, Duckju Kim, Sungwook Choi, Byungryul Kim, Sunghyun Jung, Kichang Chun, Namkyeong Kim, Wanseob Lee, Taisik Shin, Hyunjong Jin, Hyunchul Cho, Sunghoon Ahn, Yonghwan Hong, Ingon Yang, Byoungyoung Kim, Pil-Seon Yoo, Youngdon Jung, Jinwoo Lee, Jae-Hyeon Shin, Taeyun Kim, Kunwoo Park, Jinwoong Kim

Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014

2011

A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS.

Changhyuk Lee, Sok-Kyu Lee, Sunghoon Ahn, Jinhaeng Lee, Wonsun Park, Yongdeok Cho, Chaekyu Jang, Chulwoo Yang, Sanghwa Chung, In-Suk Yun, Byoungin Joo, Byoungkwan Jeong, Jeeyul Kim, Jeakwan Kwon, Hyunjong Jin, Yujong Noh, Jooyun Ha, Moonsoo Sung, Daeil Choi, Sanghwan Kim, Jeawon Choi, Taeho Jeon, Heejoung Park, Joong-Seob Yang, Yo-Hwan Koh

IEEE J. Solid State Circuits, 2011

2010

A 32Gb MLC NAND-flash memory with Vth-endurance-enhancing schemes in 32nm CMOS.

Changhyuk Lee, Sok-Kyu Lee, Sunghoon Ahn, Jinhaeng Lee, Wonsun Park, Yongdeok Cho, Chaekyu Jang, Chulwoo Yang, Sanghwa Chung, In-Suk Yun, Byoungin Joo, Byoungkwan Jeong, Jeeyul Kim, Jeakwan Kwon, Hyunjong Jin, Yujong Noh, Jooyun Ha, Moonsoo Sung, Daeil Choi, Sanghwan Kim, Jeawon Choi, Taeho Jeon, Joong-Seob Yang, Yo-Hwan Koh

Proceedings of the IEEE International Solid-State Circuits Conference, 2010