Hyunggon Kim
Affiliations:- Samsung, Seoul, South Korea
According to our database1,
Hyunggon Kim
authored at least 12 papers
between 2010 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
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Bibliography
2024
13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2021
Proceedings of the International Conference on Electronics, Information, and Communication, 2021
2020
13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2018
IEEE J. Solid State Circuits, 2018
2017
IEEE J. Solid State Circuits, 2017
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
2016
7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016
2015
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
2014
19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2012
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface.
IEEE J. Solid State Circuits, 2012
2010
A 159mm<sup>2</sup> 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface.
Proceedings of the IEEE International Solid-State Circuits Conference, 2010