Hyun-Chul Sagong

According to our database, Hyun-Chul Sagong authored at least 14 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Analysis of Failure Mechanism and Reliability Enhancement of Silicon Strain Gauge-Based Pressure Sensor for Automotive Applications.

Hyunchul Sagong, Seongcheol Jeong, Hojoon Lee

Sensors, February, 2024

Comprehensive Hammering and Parasitic BJT Effects in Vertically Stacked DRAM.

Minki Suh, Minsang Ryu, Jonghyeon Ha, Minji Bang, Dabok Lee, Hojoon Lee, Hyunchul Sagong, Jungsik Kim

IEEE Access, 2024

Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cell.

Minji Bang, Jonghyeon Ha, Minki Suh, Dabok Lee, Minsang Ryu, Jin-Woo Han, Hyunchul Sagong, Hojoon Lee, Jungsik Kim

IEEE Access, 2024

2023

Prediction of Internal Temperature of Starter Solenoid Via PoF-Based Fault Reproduction Experiment.

Sanghoon Lee, Dabin Yang, Sanghak Lee, Hyunchul Sagong, Jongsoo Lee

IEEE Trans. Instrum. Meas., 2023

2021

Systematic Study of Process Impact on FinFET Reliability.

Rakesh Ranjan, Ki-Don Lee, Md Iqbal Mahmud, Mohammad Shahriar Rahman, Pavitra Ramadevi Perepa, Charles Briscoe LaRow, Caleb Dongkyun Kwon, Maihan Nguyen, Minhyo Kang, Ashish Kumar Jha, Ahmed Shariq, Shamas Musthafa Ummer, Susannah Laure Prater, Hyunchul Sagong, HwaSung Rhee

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction.

Hai Jiang, Jinju Kim, Kihyun Choi, Hyewon Shim, Hyunchul Sagong, Junekyun Park, Hwasung Rhee, Euncheol Lee

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Trap Density Modulation for IO FinFET NBTI Improvement.

Rakesh Ranjan, Charles B. LaRow, Ki-Don Lee, Minhyo Kang, Pavitra R. Perepa, Md. Shahriar Rahman, Bong Ki Lee, David Moreau, Carolyn Cariss-Daniels, Timothy Basford, Colby Callahan, Maihan Nguyen, Gil Heyun Choi, Hyunchul Sagong, HwaSung Rhee

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology.

Hai Jiang, Hyun-Chul Sagong, Jinju Kim, Hyewon Shim, Yoohwan Kim, Junekyun Park, Taiki Uemura, Yongsung Ji, Taeyoung Jeong, Dongkyun Kwon, Hwasung Rhee, Sangwoo Pae, Brandon Lee

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Localized Layout Effect Related Reliability Approach in 8nm FinFETs Technology: From Transistor to Circuit.

Hai Jiang, Hyun-Chul Sagong, Jinju Kim, Junekyun Park, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit.

Taiki Uemura, Soonyoung Lee, Dahye Min, Ihlhwa Moon, Jungman Lim, Seungbae Lee, Hyun-Chul Sagong, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology.

Hyun-Chul Sagong, Hyunjin Kim, Seungjin Choo, Sungyoung Yoon, Hyewon Shim, Sangsu Ha, Tae-Young Jeong, Minhyeok Choe, Junekyun Park, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2018

A systematic study of gate dielectric TDDB in FinFET technology.

Hyunjin Kim, Minjung Jin, Hyun-Chul Sagong, Jinju Kim, Ukjin Jung, Minhyuck Choi, Junekyun Park, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI.

Younggeun Ji, Jeonghoon Kim, Jungin Kim, Miji Lee, Jaeheon Noh, Taeyoung Jeong, Juhyeon Shin, Junho Kim, Young Heo, Ung Cho, Hyun-Chul Sagong, Junekyun Park, Yeonsik Choo, Gilhwan Do, Hoyoung Kang, Eunkyeong Choi, Dongyoon Sun, Changki Kang, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Systematical study of 14nm FinFET reliability: From device level stress to product HTOL.

Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, Hyunwoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2015