Hyun-Chul Sagong

Orcid: 0009-0003-0236-6698

Affiliations:
  • Samsung, South Korea


According to our database1, Hyun-Chul Sagong authored at least 14 papers between 2015 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Analysis of Failure Mechanism and Reliability Enhancement of Silicon Strain Gauge-Based Pressure Sensor for Automotive Applications.
Sensors, February, 2024

Comprehensive Hammering and Parasitic BJT Effects in Vertically Stacked DRAM.
IEEE Access, 2024

Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cell.
IEEE Access, 2024

2023
Prediction of Internal Temperature of Starter Solenoid Via PoF-Based Fault Reproduction Experiment.
IEEE Trans. Instrum. Meas., 2023

2021

Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Trap Density Modulation for IO FinFET NBTI Improvement.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Localized Layout Effect Related Reliability Approach in 8nm FinFETs Technology: From Transistor to Circuit.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

A systematic study of gate dielectric TDDB in FinFET technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015
Systematical study of 14nm FinFET reliability: From device level stress to product HTOL.
Proceedings of the IEEE International Reliability Physics Symposium, 2015


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