Hyoungmin Kim
According to our database1,
Hyoungmin Kim
authored at least 2 papers
between 2021 and 2022.
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Bibliography
2022
A 16 GB 1024 GB/s HBM3 DRAM with On-Die Error Control Scheme for Enhanced RAS Features.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
2021
25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021