Hyodong Ban

According to our database, Hyodong Ban authored at least 8 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

13.6 A 16Gb 37Gb/s GDDR7 DRAM with PAM3-Optimized TRX Equalization and ZQ Calibration.

Sung-Yong Cho, Moon-Chul Choi, Jaehyeok Baek, Donggun An, Sanghoon Kim, Daewoong Lee, Seongyeal Yang, Gil-Young Kang, Juseop Park, Kyungho Lee, Hwan-Chul Jung, Gun-hee Cho, ChanYong Lee, Hye-Ran Kim, Yong-Jae Shin, Hanna Park, Sangyong Lee, Jonghyuk Kim, Bokyeon Won, Jungil Mok, Kijin Kim, Unhak Lim, Hong-Jun Jin, YoungSeok Lee, Young-Tae Kim, Heonjoo Ha, Jinchan Ahn, Wonju Sung, Yoontaek Jang, Hoyoung Song, Hyodong Ban, TaeHoon Park, Tae-Young Oh, Changsik Yoo, SangJoon Hwang

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

Interface Engineering of Trench-Ox for Modern DRAM Devices.

Soojung Hwang, Jongkyu Kim, Juntae Kim, Dahyun Cha, Minho Kim, Dongkyu Jang, Sunghak Cho, Seokhyang Kim, Jaeseong Park, Hyungjoon Kim, Sukwon Yu, Boyoung Song, Hyodong Ban

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ.

Daewoong Lee, Jaehyeok Baek, Hye-Jung Kwon, Daehyun Kwon, Chulhee Cho, Sang-Hoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoung-Joo Kim, Ho-Seok Seol, Juhwan Kim, Jung-Bum Shin, Gil-Young Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, ChanYong Lee, Seungseob Lee, TaeHoon Park, Chi-Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, SangJoon Hwang, Kyung Suk Oh, Jung-Hwan Choi, Jooyoung Lee

IEEE J. Solid State Circuits, 2023

14nm DRAM Development and Manufacturing.

Kanguk Kim, Youngwoo Son, Hoin Ryu, Byunghyun Lee, Jooncheol Kim, Hyunsu Shin, Joonyoung Kang, Jihun Kim, Shinwoo Jeong, Kyosuk Chae, Dongkak Lee, Ilwoo Jung, Yongkwan Kim, Boyoung Song, Jeonghoon Oh, Jungwoo Song, Seguen Park, Keumjoo Lee, Hyodong Ban, Jiyoung Kim, Jooyoung Lee

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Investigation on NBTI Control Techniques of HKMG Transistors for Low-power DRAM applications.

Wonju Sung, Hyun Seung Kim, Jung Hoon Han, Seguen Park, Jeonghoon Oh, Hyodong Ban, Jooyoung Lee

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Analysis of Intermittent Single-bit Failure on 10-nm node generation DRAM Devices.

Hyewon Seo, Taiuk Rim, Eunsun Lee, Sekyoung Jang, Kyosuk Chae, Jeonghoon Oh, Hyodong Ban, Jooyoung Lee

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Enhanced DRAM Single Bit Characteristics from Process Control of Chlorine.

Taiuk Rim, Kyosuk Che, Sehyun Kwon, Jin-Seong Lee, Jeonghoon Oh, Hyodong Ban, Jooyoung Lee

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

A 16Gb 27Gb/s/pin T-coil based GDDR6 DRAM with Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus.

Daewoong Lee, Hye-Jung Kwon, Daehyun Kwon, Jaehyeok Baek, Chulhee Cho, Sanghoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoungjoo Kim, Ho-Seok Seol, Juhwan Kim, Junabum Shin, Kil-Youna Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, ChanYong Lee, Seungseob Lee, TaeHoon Park, Chi Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, SangJoon Hwang, Kyung Suk Oh, Jung-Hwan Choi, Jooyoung Lee

Proceedings of the IEEE International Solid-State Circuits Conference, 2022