Hye-Ran Kim
According to our database1,
Hye-Ran Kim
authored at least 13 papers
between 2008 and 2024.
Collaborative distances:
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Bibliography
2024
13.6 A 16Gb 37Gb/s GDDR7 DRAM with PAM3-Optimized TRX Equalization and ZQ Calibration.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ.
IEEE J. Solid State Circuits, 2023
2022
A 16Gb 27Gb/s/pin T-coil based GDDR6 DRAM with Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2020
A Dual-Mode Ground-Referenced Signaling Transceiver with a 3-Tap Feed-Forward Equalizer for Memory Interfaces.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2020
2018
A 4.0-10.0-Gb/s Referenceless CDR with Wide-Range, Jitter-Tolerant, and Harmonic-Lock-Free Frequency Acquisition Technique.
Proceedings of the 44th IEEE European Solid State Circuits Conference, 2018
2017
23.2 A 5Gb/s/pin 8Gb LPDDR4X SDRAM with power-isolated LVSTL and split-die architecture with 2-die ZQ calibration scheme.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
23.4 An extremely low-standby-power 3.733Gb/s/pin 2Gb LPDDR4 SDRAM for wearable devices.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
2015
A 3.2 Gbps/pin 8 Gbit 1.0 V LPDDR4 SDRAM With Integrated ECC Engine for Sub-1 V DRAM Core Operation.
IEEE J. Solid State Circuits, 2015
2011
A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction.
IEEE J. Solid State Circuits, 2011
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011
2010
A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction.
Proceedings of the IEEE International Solid-State Circuits Conference, 2010
2008
A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques.
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2008), 2008