Hwasung Rhee

Affiliations:
  • Samsung, Seoul, South Korea


According to our database1, Hwasung Rhee authored at least 11 papers between 2020 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
Machine Learning Based V-ramp VBD Predictive Model Using OCD-measured Fab Parameters for Early Detection of MOL Reliability Risk.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021
Soft-Error Susceptibility in Flip-Flop in EUV 7 nm Bulk-FinFET Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2021


Chip to Package Interaction Risk Assessment of FCBGA Devices using FEA Simulation, Meta-Modeling and Multi-Objective Genetic Algorithm Optimization Technique.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Investigating of SER in 28 nm FDSOI-Planar and Comparing with SER in Bulk-FinFET.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Backside Alpha-Irradiation Test in Flip-Chip Package in EUV 7 nm FinFET SRAM.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Trap Density Modulation for IO FinFET NBTI Improvement.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020


Reliability on EUV Interconnect Technology for 7nm and beyond.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020


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