Hunbeom Shin

Orcid: 0000-0001-5751-7973

According to our database1, Hunbeom Shin authored at least 5 papers between 2022 and 2024.

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Bibliography

2024
In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023
Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices.
IEEE J. Solid State Circuits, 2023

Ultra-high Tunneling Electroresistance Ratio (2 × 10<sup>4</sup>) & Endurance (10<sup>8</sup>) in Oxide Semiconductor-Hafnia Self-rectifying (1.5 × 10<sup>3</sup>) Ferroelectric Tunnel Junction.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022
A Highly Integrated Crosspoint Array Using Self-rectifying FTJ for Dual-mode Operations: CAM and PUF.
Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022


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