Huili Grace Xing

According to our database1, Huili Grace Xing authored at least 19 papers between 2013 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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On csauthors.net:

Bibliography

2024
AlN/GaN/AlN HEMTs on Bulk AlN Substrates with High Drain Current Density > 2.8 A/mm and Average Breakdown Field > 2 MV/cm.
Proceedings of the Device Research Conference, 2024

2023
AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022
HZO-based FerroNEMS MAC for In-Memory Computing.
CoRR, 2022

A Composite TE-TFE-FE Model for Schottky Barrier Reverse Current over the Entire Electric-Field Range.
Proceedings of the Device Research Conference, 2022

First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates.
Proceedings of the Device Research Conference, 2022

2021
Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz.
Proceedings of the Device Research Conference, 2021

2020
Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts.
Proceedings of the 2020 Device Research Conference, 2020

2019
Buried tunnel junction for p-down nitride laser diodes.
Proceedings of the Device Research Conference, 2019

Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm<sup>2</sup>.
Proceedings of the Device Research Conference, 2019

Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes.
Proceedings of the Device Research Conference, 2019

A Single-Device Embodiment of XNOR Logic: TransiXNOR.
Proceedings of the Device Research Conference, 2019

Efficient InGaN p-Contacts for deep-UV Light Emitting Diodes.
Proceedings of the Device Research Conference, 2019

2018
Degradation of GaN-on-GaN vertical diodes submitted to high current stress.
Microelectron. Reliab., 2018

Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering.
Proceedings of the 76th Device Research Conference, 2018

1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes.
Proceedings of the 76th Device Research Conference, 2018

Realization of the First GaN Based Tunnel Field-Effect Transistor.
Proceedings of the 76th Device Research Conference, 2018

2017
In Quest of the Next Information Processing Substrate: Extended Abstract: Invited.
Proceedings of the 54th Annual Design Automation Conference, 2017

2013
Graphene for Reconfigurable Terahertz Optoelectronics.
Proc. IEEE, 2013

Graphene nanoribbon FETs for digital electronics: experiment and modeling.
Int. J. Circuit Theory Appl., 2013


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