Hui Huang
Orcid: 0000-0002-3130-3456Affiliations:
- Dalian University of Technology, Faculty of Electronic Information and Electrical Engineering, China
- Beijing University of Posts and Telecommunications, Key Laboratory of Optical Communication and Lightwave Technologies, China (until 2011)
According to our database1,
Hui Huang
authored at least 7 papers
between 2006 and 2014.
Collaborative distances:
Collaborative distances:
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Bibliography
2014
Proceedings of the 11th IEEE International Conference on Control & Automation, 2014
2009
Growth of B<sub>x</sub>Ga<sub>1-</sub><sub>x</sub>As, B<sub>x</sub>Al<sub>1-</sub><sub>x</sub>As and B<sub>x</sub>Ga<sub>1-</sub><sub>x</sub><sub>-</sub><sub>y</sub>In<sub>y</sub>As epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition.
Microelectron. J., 2009
2008
LP-MOCVD growth of ternary B<sub>x</sub>Ga<sub>1-</sub><sub>x</sub>As epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH<sub>3</sub>.
Microelectron. J., 2008
2007
Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD.
Microelectron. J., 2007
Temperature-controlled self-organized InP nanostructures grown on GaAs(100) substrate by MOCVD.
Microelectron. J., 2007
Epitaxial lateral overgrowth of InP/GaAs (100) heterostructures by metalorganic chemical vapor deposition.
Microelectron. J., 2007
2006
Heteroepitaxy of In<sub>0.53</sub>Ga<sub>0.47</sub>As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications.
Microelectron. J., 2006