Huaxiang Yin

According to our database, Huaxiang Yin authored at least 18 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of three.

2024

Source/drain extension asymmetric counter-doping for suppressing channel leakage in stacked nanosheet transistors.

Qingkun Li, Lei Cao, Qingzhu Zhang, Lianlian Li, Xuexiang Zhang, Chuqiao Niu, Guanqiao Sang, Yunjiao Bao, Huaxiang Yin, Zhenhua Wu

Microelectron. J., 2024

Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures.

Zhaomeng Gao, Tianjiao Xin, Cheng Liu, Yilin Xu, Yiwei Wang, Yunzhe Zheng, Rui Wang, Xiaotian Li, Yonghui Zheng, Kai Du, Diqing Su, Zhaohao Zhang, Huaxiang Yin, Weifeng Zhang, Chao Li, Xiaoling Lin, Haitao Jiang, Sannian Song, Zhitang Song, Yan Cheng, Hangbing Lyu

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Investigation on dependency of thermal characteristics on gate/drain bias voltages in stacked nanosheet transistors.

Peng Zhao, Lei Cao, Fan Zhang, Haoqing Xu, Weizhuo Gan, Qingzhu Zhang, Zhaohao Zhang, Jiaxin Yao, Guoliang Tian, Kun Luo, Zhenhua Wu, Huaxiang Yin

Microelectron. J., November, 2023

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.

Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang

Adv. Intell. Syst., November, 2023

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.

Zhaohao Zhang, Guoliang Tian, Jiali Huo, Fang Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Yan Cheng, Yan Liu, Huaxiang Yin

Sci. China Inf. Sci., October, 2023

2022

Transfer Learning for Improving Seismic Building Damage Assessment.

Qigen Lin, Tianyu Ci, Leibin Wang, Sanjit Kumar Mondal, Huaxiang Yin, Ying Wang

Remote. Sens., 2022

Investigation on Contacts Thermal Stability for 3D Sequential Integration.

S. J. Mao, J. B. Liu, Y. Wang, W. B. Liu, Y. P. Hu, H. W. Cui, R. Zhang, H. C. Liu, Z. X. Wang, N. Zhou, Y. K. Zhang, Hong Yang, Zhenhua Wu, Yongliang Li, J. F. Gao, Anyun Du, Junfeng Li, Jun Luo, Wenwu Wang, Huaxiang Yin

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Prediction of Key Metrics of Stacked Nanosheet nFETs using Genetic Algorithm-based Neural Networks.

Haoqing Xu, Weizhuo Gan, Lei Cao, Huaxiang Yin, Zhenhua Wu

Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022

2021

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit.

Jiali Huo, Weixing Huang, Fan Zhang, Shengli Zhang, Weizhuo Gan, Qiang Huo, Yuwei Cai, Qingzhu Zhang, Yongliang Li, Huilong Zhu, Huaxiang Yin, Zhenhua Wu

Microelectron. J., 2021

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.

Longda Zhou, Zhaohao Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Qingzhu Zhang, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao, Wenwu Wang

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs.

Hao Chang, Longda Zhou, Hong Yang, Zhigang Ji, Qianqian Liu, Eddy Simoen, Huaxiang Yin, Wenwu Wang

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO₂/TiN-capping/TiAl gate stacks.

Hong Yang, Luwei Qi, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye

Sci. China Inf. Sci., 2020

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.

Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang

Sci. China Inf. Sci., 2020

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin

IEEE Access, 2020

Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs.

Longda Zhou, Qingzhu Zhang, Hong Yang, Zhigang Ji, Zhaohao Zhang, Renren Xu, Huaxiang Yin, Wenwu Wang

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Process variation dependence of total ionizing dose effects in bulk nFinFETs.

Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang

Microelectron. Reliab., 2018

Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.

Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin

Microelectron. Reliab., 2018

2015

Gate-All-Around Silicon Nanowire Transistors with channel-last process on bulk Si substrate.

Xiaolong Ma, Huaxiang Yin, Peizhen Hong

IEICE Electron. Express, 2015